Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -5.1A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 115mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5.1A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. RDS(ON) = 115mW @VGS = -2.5V.

P Channel MOSFET

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. The AM3407 is available in SOT-23 package. FEATURES  VDS = -30V,ID =

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS= -30V VGS= ±20V ID(A)= -4.3A RDS(ON)=38mΩ(Typ.)@VGS=-10V RDS(ON)=58mΩ(Typ.)@VGS=-4.5V The AM3407A is available in SOT-23 package. FEATURES ⚫ Available in SOT-23 p ackage APPLICATION ⚫ Portable Equipment ⚫ Power Management ⚫ Load Switch

Heyco® PG and Metric Threaded Plugs

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-4.1A竊?30V P-CHANNEL MOSFET

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Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages