DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-5.1A,RDS(ON)=48mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. RDS(ON)=115mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-5.1A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=115mW@VGS=-2.5V.

MOSFETP-CHANNELENHANCEMENTMODEPOWERMOSFET

DESCRIPTION TheAM3407usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. TheAM3407isavailableinSOT-23package. FEATURES VDS=-30V,ID=

MOSFET-30VP-CHANNELENHANCEMENTMODE

DESCRIPTION VDS=-30V VGS=±20V ID(A)=-4.3A RDS(ON)=38mΩ(Typ.)@VGS=-10V RDS(ON)=58mΩ(Typ.)@VGS=-4.5V TheAM3407AisavailableinSOT-23package. FEATURES ⚫AvailableinSOT-23package APPLICATION ⚫PortableEquipment ⚫PowerManagement ⚫LoadSwitch

-4.1A竊?30VP-CHANNELMOSFET

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Heyco®PGandMetricThreadedPlugs

文件：114.81 Kbytes Page：1 Pages

Heyco®PGandMetricThreadedPlugs

文件：114.81 Kbytes Page：1 Pages