AMD A55E FCH

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.8A, RDS(ON) = 125mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.9A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RDS(ON) = 130mW @VGS = 5V. RDS(ON) = 145mW @VGS = 3V. Pb-free lead plating ; RoHS compliant. Halogen Free. Applicati

4 SATA-600 with RAID 0, 1, 5, 10

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COM Express Type 2 Basic Module with AMD G-Series APU and AMD A55E

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N Channel MOSFET

N Channel MOSFET

N Channel MOSFET

AMD A55E FCH

文件：221.98 Kbytes Page：1 Pages

AMD A55E FCH

文件：221.98 Kbytes Page：1 Pages

4 SATA-600 with RAID 0, 1, 5, 10

文件：253.88 Kbytes Page：1 Pages

4 SATA-600 with RAID 0, 1, 5, 10

文件：253.88 Kbytes Page：1 Pages

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

100/200

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TOGGLE SWITCHES - MINIATURE

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