Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.8A, RDS(ON) = 125mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

N Channel MOSFET

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.9A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RDS(ON) = 130mW @VGS = 5V. RDS(ON) = 145mW @VGS = 3V. Pb-free lead plating ; RoHS compliant. Halogen Free. Applicati

N Channel MOSFET

N Channel MOSFET

QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

Wire Wound

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