N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-126 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.3A, RDS(ON) = 8.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126 package. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-126 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 2.0A, RDS(ON) = 5.0W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126 package. Lead-free plating ; RoHS compliant.

包装：散装 描述：CONN PCI EXP FMALE 230POS 0.039 连接器，互连器件 边缘板连接器

金手指连接器

包装：散装 描述：CONN PCI EXP FMALE 230POS 0.039 连接器，互连器件 边缘板连接器

金手指连接器

N Channel MOSFET