N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 20V , 26A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m @V Ω GS=2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.

Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

Dual N-Channel 20-V (D-S) MOSFET

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6A竊?0V Dual N-CHANNEL MOSFET

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

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