N-Channel Logic Level Enhancement Mode Field Effect Transistor

30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Lead free product is acquired. ​​​​​​​● TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ​​​​​​​● TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

702/703 Flanged Diaphragm Seal

FEATURES „„ Large diaphragm provides ample displacement for low pressure applications

702/703 Flanged Diaphragm Seal

FEATURES „„ Large diaphragm provides ample displacement for low pressure applications

PHENOLIC INSTRUMENT CASES

[KEYSTONE] PHENOLIC INSTRUMENT CASES •Choice of Sizes •Sturdy construction •Flush mounting panels •Cases and panels are sold separately •Covers available in Phenolic or Aluminum •Covers can be machined to accept dials, switches, displays •Panel mounting screws available

Capacity (20-hour) 280Ah

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Toggle switches

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