N-Channel Logic Level Enhancement Mode Field Effect Transistor

30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

SWIRCHMODE??Schottky Power Rectifier(D3PAK Power Surface Mount Pakage)

Integrated Circuit Module, AF PO, 50W, Dual Power Supply

Features: Small–Sized Package Allows Audio Sets to be made Slimmer Facilitates Thermal Design of Slim Stereo Sets Constant–Current Circuit Minimizes Pop Noise During Power ON/OFF Possible to Design Electronic Supplementary Circuits: Pop Noise Muting During Power ON/OFF

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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