型号 功能描述 生产厂家 企业 LOGO 操作
CEP35P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

CEP35P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -32A, RDS(ON) =76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =92mW @VGS = -4.5V. Lead-free plating ; RoHS compliant.

CET-MOS

华瑞

CEP35P10

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Switched mode power supplies. Lighting. DC Motor control. Load switch. battery powered.

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -32A, RDS(ON) =76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =92mW @VGS = -4.5V. Lead-free plating ; RoHS compliant.

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Switched mode power supplies. Lighting. DC Motor control. Load switch. battery powered.

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -32A, RDS(ON) =76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =92mW @VGS = -4.5V. Lead-free plating ; RoHS compliant.

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

CEP35P10产品属性

  • 类型

    描述

  • 型号

    CEP35P10

  • 制造商

    CET

  • 制造商全称

    Chino-Excel Technology

  • 功能描述

    P-Channel Enhancement Mode Field Effect Transistor

更新时间:2026-3-13 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VB
2026+
TO-220
5003
原装正品,假一罚十!
CET/華瑞
25+
TO-220
20300
CET/華瑞原装特价CEP35P10即刻询购立享优惠#长期有货
CET
16
TO-220
625
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TI
24+
QFN-16
6618
公司现货库存,支持实单
CET
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!
CET
24+
TO2203
2656
CET
24+
TO-220
520
绝对原装正品现货假一赔十
CET
24+
TO-220
11000
原装正品 有挂有货 假一赔十
VBSEMI
20+
TO-220
5028
全新 发货1-2天
CET
26+
VQFN-16
86720
全新原装正品价格最实惠 承诺假一赔百

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