位置：首页 > IC中文资料第8603页 > CEP35P10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP35P10 | P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 |   | |
CEP35P10 | P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =92mW @VGS = -4.5V. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | |
CEP35P10 | P Channel MOSFET | CET 华瑞 | | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Switched mode power supplies. Lighting. DC Motor control. Load switch. battery powered. | CET-MOS 华瑞 | | ||
P Channel MOSFET | CET 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =92mW @VGS = -4.5V. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Switched mode power supplies. Lighting. DC Motor control. Load switch. battery powered. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =92mW @VGS = -4.5V. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | |
CEP35P10产品属性
- 类型
描述
- 型号
CEP35P10
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
P-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
QFN-16 |
6618 |
公司现货库存,支持实单 |
|||
CET/華瑞 |
24+ |
NA/ |
12300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET/華瑞 |
25+ |
TO-220 |
156548 |
明嘉莱只做原装正品现货 |
|||
VB |
25+ |
TO-220 |
5003 |
原装正品,假一罚十! |
|||
CET/華瑞 |
25+ |
TO-220 |
20300 |
CET/華瑞原装特价CEP35P10即刻询购立享优惠#长期有货 |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO2203 |
2656 |
||||
CET |
24+ |
TO-220 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
CET |
2023+ |
123000 |
进口原装现货 |
||||
CET |
25+ |
VQFN-16 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
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DdatasheetPDF页码索引
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