位置：首页 > IC中文资料第8603页 > CEP35P10
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP35P10 | P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  |   |
CEP35P10 | P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | |
P-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
P-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | |
CEP35P10产品属性
- 类型
描述
- 型号
CEP35P10
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
P-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
18 |
TO-220 |
5000 |
原装正品现货 |
|||
CET |
24+ |
TO2203 |
2656 |
||||
CET/華瑞 |
25+ |
TO-220 |
156548 |
明嘉莱只做原装正品现货 |
|||
SR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET/華瑞 |
23+ |
TO-220 |
7000 |
||||
CET(华瑞) |
2447 |
TO-220(TO-220-3) |
115000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET/華瑞 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
CET/華瑞 |
25+ |
TO-220 |
20300 |
CET/華瑞原装特价CEP35P10即刻询购立享优惠#长期有货 |
|||
CET |
16 |
TO-220 |
625 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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