位置:首页 > IC中文资料 > CEP16N10

型号 功能描述 生产厂家 企业 LOGO 操作
CEP16N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

CEP16N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 15.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

CET-MOS

华瑞

CEP16N10

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 15.2A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 125mW @VGS = 5V.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N - CHANNEL 100V - 0.14 ohm - 16A - TO-220 POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.14 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTE

STMICROELECTRONICS

意法半导体

CEP16N10产品属性

  • 类型

    描述

  • BVDSS(V):

    100

  • Rds(on)mΩ@10V:

    120

  • ID(A):

    15.2

  • Qg(nC)@10V(typ):

    11

  • RθJC(℃/W):

    2.5

  • Pd(W):

    60

  • Configuration:

    Single

  • Polarity:

    N

更新时间:2026-7-31 14:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
CET
11+
TO-220
276
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET/華瑞
2022+
TO-220
2000
原厂代理 终端免费提供样品
CET/華瑞
2002
CDRH64
3200
全新、原装
CET/華瑞
25+
TO-220
90000
全新原装现货
CET
26+
VQFN-16
86720
全新原装正品价格最实惠 承诺假一赔百
CET
25+
TO-220
11000
原装正品 有挂有货 假一赔十
CET/華瑞
23+
TO-220
81092
原厂授权一级代理,专业海外优势订货,价格优势、品种
26+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
CET/華瑞
20+
TO-220
32500
现货很近!原厂很远!只做原装

CEP16N10数据表相关新闻