位置：首页 > IC中文资料第10411页 > CEP16N10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP16N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 |   | |
CEP16N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | |
CEP16N10 | N Channel MOSFET | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 125mW @VGS = 5V. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 125mW @VGS = 5V. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 120mW @VGS = 10V. RDS(ON) = 135mW @VGS = 5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | |
CEP16N10产品属性
- 类型
描述
- 型号
CEP16N10
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
25+ |
VQFN-16 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
CET |
24+ |
TO-220 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
CET |
11+ |
TO-220 |
276 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
CET/華瑞 |
23+ |
TO-220 |
81092 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
TI |
24+ |
QFN |
6618 |
公司现货库存,支持实单 |
|||
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
CET/華瑞 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
CET(华瑞) |
2447 |
TO-220(TO-220-3) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET/華瑞 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
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