位置：首页 > IC中文资料第10411页 > CEP16N10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP16N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 |   | |
CEP16N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | |
CEP16N10 | N Channel MOSFET | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 125mW @VGS = 5V. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 125mW @VGS = 5V. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 120mW @VGS = 10V. RDS(ON) = 135mW @VGS = 5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | |
CEP16N10产品属性
- 类型
描述
- 型号
CEP16N10
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
25+ |
TO-220 |
156635 |
明嘉莱只做原装正品现货 |
|||
CET |
23+ |
TO-220 |
15000 |
原装正品,假一罚十 |
|||
CET(华瑞) |
2447 |
TO-220(TO-220-3) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET/華瑞 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
CET-MOS |
30 |
||||||
CET-MOS |
24+ |
con |
30 |
现货常备产品原装可到京北通宇商城查价格 |
|||
CET(华瑞) |
25+ |
TO-220 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
TI |
24+ |
QFN |
6618 |
公司现货库存,支持实单 |
|||
CET |
25+ |
VQFN-16 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
CET |
24+ |
TO-220 |
11000 |
原装正品 有挂有货 假一赔十 |
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DdatasheetPDF页码索引
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