N-ChannelEnhancementModeFieldEffectTransistor

FEATURES •60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. •HighdensecelldesignforlowRDS(ON) •Ruggedandreliable. •SOT-89Package

N-Channel60-V(D-S)MOSFET

文件：989.83 Kbytes Page：6 Pages

WASHERSANDNUTS

[KEYSTONE] FIBRESHOULDERWASHERS HEXMACHINENUTS NYLONSHOULDERWASHER/BUSHINGS BLINDCAPTIVENUTS-PRESSFIT METRICMACHINENUTS

MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs

MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs TheUGN3055UHall-effectsensorisadigitalmagneticsensingICcapableofcommunicatingoveratwo-wirepower/signalbus.Usingasequentialaddressingscheme,thedevicerespondstoasignalonthebusandreturnsthediagnosticstatusoftheIC,as

CustomerSpecification

Construction 1)Component11X1HOOKUP a)Conductor18(16/30)AWGTinnedCopper0.047 b)Insulation0.016Wall,Nom.PVC0.079+/-0.002 (1)Print ALPHAWIREE163869-*RUAWMSTYLES1569105C OR100780C300VVW-1IEC60332-118AWG ORCRUTR-6490CFT1CEROHS {0}*=FactoryCode

N-Channel30-V(D-S)MOSFET

文件：959.93 Kbytes Page：8 Pages

CustomerSpecification

文件：70.18 Kbytes Page：3 Pages