TEMPERATURE COMPENSATED ZENER DIODES

• 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 AND 1N829UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 6.2 AND 6.55 VOLT NOMINAL ZENER VOLTAGES • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRU

TEMPERATURE COMPENSATED ZENER DIODES

DESCRIPTION The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal voltages and temperature coefficients to as low as 0.0005/oC for minimal voltage change with temperature when operated at 7.5 mA. These glass axial-leaded DO-7 referen

包装：散装 描述：DIODE ZENER 分立半导体产品 二极管 - 齐纳 - 单

封装/外壳：DO-213AA 包装：卷带（TR） 描述：DIODE ZENER TEMP COMPENSATED 分立半导体产品 二极管 - 齐纳 - 单

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit Low Voltage Audio Amplifier

Description: The NTE823 is an audio power amplifier in an 8–Lead DIP type package designed for use in low volt age consumer applications.