丝印代码：CDCE421A；Fully-Integrated, Wide Range, Low-Jitter Crystal Oscillator Clock Generator

1FEATURES 2· Single Supply at 3.3 V for LVPECL or LVDS Operation · High-Performance Clock Multiplier, Incorporating Crystal Oscillator Circuitry with Integrated Frequency Synthesizer · Low Output Jitter: 380 fs RMS typical (from 10 kHz to 20 MHz) · Low Phase Noise at High Frequency (708-MH

Fully-Integrated, Wide Range, Low-Jitter Crystal Oscillator Clock Generator

文件：815.95 Kbytes Page：27 Pages

封装/外壳：24-VFQFN 裸露焊盘 包装：托盘 描述：IC CRYSTAL OSCILLATR CLCK 24VQFN 集成电路（IC） 时钟发生器，PLL，频率合成器

丝印代码：CDCE421A；Fully-Integrated, Wide Range, Low-Jitter Crystal Oscillator Clock Generator

1FEATURES 2· Single Supply at 3.3 V for LVPECL or LVDS Operation · High-Performance Clock Multiplier, Incorporating Crystal Oscillator Circuitry with Integrated Frequency Synthesizer · Low Output Jitter: 380 fs RMS typical (from 10 kHz to 20 MHz) · Low Phase Noise at High Frequency (708-MH

丝印代码：CDCE421A；Fully-Integrated, Wide Range, Low-Jitter Crystal Oscillator Clock Generator

1FEATURES 2· Single Supply at 3.3 V for LVPECL or LVDS Operation · High-Performance Clock Multiplier, Incorporating Crystal Oscillator Circuitry with Integrated Frequency Synthesizer · Low Output Jitter: 380 fs RMS typical (from 10 kHz to 20 MHz) · Low Phase Noise at High Frequency (708-MH

丝印代码：CDCE421A；Fully-Integrated, Wide Range, Low-Jitter Crystal Oscillator Clock Generator

1FEATURES 2· Single Supply at 3.3 V for LVPECL or LVDS Operation · High-Performance Clock Multiplier, Incorporating Crystal Oscillator Circuitry with Integrated Frequency Synthesizer · Low Output Jitter: 380 fs RMS typical (from 10 kHz to 20 MHz) · Low Phase Noise at High Frequency (708-MH

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

文件：30.84 Kbytes Page：1 Pages