SMD Power Inductor

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功率电感

• Ferrite core construction.\n• Magnetically shielded.\n• L×W×H: 13.0×12.8×8.0mm Max.\n• Product weight: 5.4g(Ref.)\n• Moisture Sensitivity Level: 1 \n• RoHS compliance.\n• Operating temperature range: -40℃～+125℃(including coil's self temperature rise)\n• Storage temperature range: -40℃～+125℃\n• Ide;

功率电感

• Ferrite core construction.\n• Magnetically shielded.\n• L×W×H: 13.0×12.8×8.0mm Max.\n• Product weight: 5.4g(Ref.)\n• Moisture Sensitivity Level: 1 \n• RoHS compliance.\n• Operating temperature range: -40℃～+125℃(including coil's self temperature rise)\n• Storage temperature range: -40℃～+125℃\n• Ide;

功率电感

• Ferrite core construction.\n• Magnetically shielded.\n• L×W×H: 13.0×12.8×8.0mm Max.\n• Product weight: 5.4g(Ref.)\n• Moisture Sensitivity Level: 1 \n• RoHS compliance.\n• Operating temperature range: -40℃～+125℃(including coil's self temperature rise)\n• Storage temperature range: -40℃～+125℃\n• Ide;

SMD Power Inductor

文件：137.43 Kbytes Page：2 Pages

SMD Power Inductor

文件：137.43 Kbytes Page：2 Pages

SMD Power Inductor

文件：137.43 Kbytes Page：2 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

Silicon epitaxial planar type

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