SILICON DIOXIDE PASSIVATED

• IN6677 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/610 • 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES , WITH THE EXCEPTION OF SOLDER REFLOW

Si Schottky Rectifier Diodes

FEATURES:• 1N6677 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/610• 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIER CHIPS• SILICON DIOXIDE PASSIVATED• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,WITH THE EXCEPTION OF SOLDER REFLOW

30V N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(O

30V N-Channel PowerTrench SyncFET?

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP/B6676S includes an integrated Schottky

SMPS PRIMARY IC

The Series STR-F6600 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. The series incorporates a primary control and drive circuit with discrete avalanche-rated power MOSFETs. Covering the power range from

64-Common X 132-Segment plus 1-Icon Bit Map Type LCD Controller and Driver

文件：856.37 Kbytes Page：46 Pages

64-Common X 132-Segment plus 1-Icon Bit Map Type LCD Controller and Driver

文件：856.37 Kbytes Page：46 Pages