Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

INVERTER CIRCUIT CMOS IC

■ DESCRIPTION The UTC CD4069 is a CMOS IC with six inverter circuits and designed for using of wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. The IC is capable of ESD protection by diode clamps to VDD and VSS. ■ FEATUR

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all genera

Inverter Circuits

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6路反相器，Hex Inverter

6路反相器

Inverter Circuits

INVERTER CIRCUITS

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INVERTER CIRCUITS

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SEMICONDUCTORS

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INVERTER CIRCUIT CMOS IC

■ DESCRIPTION The UTC CD4069 is a CMOS IC with six inverter circuits and designed for using of wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. The IC is capable of ESD protection by diode clamps to VDD and VSS. ■ FEATUR

INVERTER CIRCUIT CMOS IC

■ DESCRIPTION The UTC CD4069 is a CMOS IC with six inverter circuits and designed for using of wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. The IC is capable of ESD protection by diode clamps to VDD and VSS. ■ FEATUR

INVERTER CIRCUIT CMOS IC

■ DESCRIPTION The UTC CD4069 is a CMOS IC with six inverter circuits and designed for using of wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. The IC is capable of ESD protection by diode clamps to VDD and VSS. ■ FEATUR

INVERTER CIRCUIT CMOS IC

■ DESCRIPTION The UTC CD4069 is a CMOS IC with six inverter circuits and designed for using of wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. The IC is capable of ESD protection by diode clamps to VDD and VSS. ■ FEATUR

INVERTER CIRCUIT CMOS IC

■ DESCRIPTION The UTC CD4069 is a CMOS IC with six inverter circuits and designed for using of wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. The IC is capable of ESD protection by diode clamps to VDD and VSS. ■ FEATUR

INVERTER CIRCUIT CMOS IC

■ DESCRIPTION The UTC CD4069 is a CMOS IC with six inverter circuits and designed for using of wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. The IC is capable of ESD protection by diode clamps to VDD and VSS. ■ FEATUR

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all genera

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all genera

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all genera

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CMOS Hex Inverter

Description CD4069UBMS types consist of six CMOS inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic level conversion capabilities of circuits such as the CD4009 and CD4049 Hex Inverter/Buffers are not required. T

CMOS Hex Inverter

Features • High Voltage Types (20V Rating) • Standardized Symmetrical Output Characteristics • Medium Speed Operation: tPHL, tPLH = 30ns (typ) at 10V • 100 Tested for Quiescent Current at 20V • Maximum Input Current of 1A at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC •

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

INVERTER CIRCUITS

文件：237.13 Kbytes Page：7 Pages

INVERTER CIRCUITS

文件：286.41 Kbytes Page：7 Pages

INVERTER CIRCUITS

文件：203.18 Kbytes Page：7 Pages

INVERTER CIRCUITS

文件：203.18 Kbytes Page：7 Pages

INVERTER CIRCUITS

文件：286.41 Kbytes Page：7 Pages

INVERTER CIRCUITS

文件：203.18 Kbytes Page：7 Pages

INVERTER CIRCUITS

文件：237.13 Kbytes Page：7 Pages

INVERTER CIRCUITS

文件：203.18 Kbytes Page：7 Pages

INVERTER CIRCUITS

文件：286.41 Kbytes Page：7 Pages

INVERTER CIRCUITS

文件：237.13 Kbytes Page：7 Pages

Hex Inverter

Hex inverter

Hex inverter

Hex Inverter

Hex Inverter

COMPLEMENTARY METAL OXIDE SILICON

HEX INVERTER

Hex Inverter