丝印代码：CD4069UB；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UB；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

6 通道、3V 至 18V 反相器

CD4069UB 器件由六个 CMOS 逆变器电路组成。这些器件可用于 所有 不需要电路中等功耗 TTL 驱动和逻辑电平转换功能的通用逆变器应用，例如 CD4009 和 CD4049 六路逆变器和缓冲器。 • 标准化对称输出特性\n• 中速运行：tPHL、tPLH = 30ns，10V（典型值）\n• 100% 测试 20V 时的静态电流\n• 在全封装温度范围内，在 18V 时的最大输入电流为 1µA，在 18V 和 25°C 时为 100nA\n• 符合 JEDEC 第 13B 号暂行标准，《B 系列 CMOS 器件 说明规范标准》 的所有要求;

6路反相器

CMOS HEX IVVERTER

文件：229.32 Kbytes Page：4 Pages

CMOS Hex Inverter

文件：1.30607 Mbytes Page：30 Pages

丝印代码：CD4069UBE；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBE；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBE；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBF；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBF；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBF3A；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBF3A；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBM；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBM；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBM；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBM；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CD4069UBM；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all genera

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all genera

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all genera

CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CMOS Hex Inverter

Description CD4069UBMS types consist of six CMOS inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic level conversion capabilities of circuits such as the CD4009 and CD4049 Hex Inverter/Buffers are not required. T

CMOS Hex Inverter

CD4069UBMS types consist of six CMOS inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic level conversion capabilities of circuits such as the CD4009 and CD4049 Hex Inverter/Buffers are not required.\nThe CD4069UBMS i • High Voltage Types (20V Rating) \n• Standardized Symmetrical Output Characteristics \n• Medium Speed Operation: tPHL, tPLH = 30ns (typ) at 10V \n• 100% Tested for Quiescent Current at 20V \n• Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC \n• Me;

CMOS Hex Inverter

Features • High Voltage Types (20V Rating) • Standardized Symmetrical Output Characteristics • Medium Speed Operation: tPHL, tPLH = 30ns (typ) at 10V • 100 Tested for Quiescent Current at 20V • Maximum Input Current of 1A at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC •

丝印代码：CM069UB；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CM069UB；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CM069UB；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

丝印代码：CM069UB；CD4069UB CMOS hex inverter

1 Features 1• Standardized symmetrical output characteristics • Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical) • 100% Tested for quiescent current at 20 V • Maximum input current of 1 μA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C • Meets all requ

CMOS Hex Inverter

文件：1.30607 Mbytes Page：30 Pages

Inverter Circuits

文件：137.35 Kbytes Page：6 Pages

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC INVERTER 6CH 1-INP 14SOIC 集成电路（IC） 门和反相器

封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC INVERTER 6CH 1-INP 14DIP 集成电路（IC） 门和反相器

CMOS HEX IVVERTER

文件：229.32 Kbytes Page：4 Pages

CMOS Hex Inverter

文件：940.17 Kbytes Page：16 Pages

CMOS Hex Inverter

文件：1.30607 Mbytes Page：30 Pages

CMOS Hex Inverter

文件：940.17 Kbytes Page：16 Pages

CMOS Hex Inverter

文件：1.30607 Mbytes Page：30 Pages

CMOS Hex Inverter

文件：940.17 Kbytes Page：16 Pages

CMOS Hex Inverter

文件：1.30607 Mbytes Page：30 Pages

CMOS Hex Inverter

文件：940.17 Kbytes Page：16 Pages

CMOS Hex Inverter

文件：1.30607 Mbytes Page：30 Pages

CMOS Hex Inverter

文件：1.30607 Mbytes Page：30 Pages

CMOS Hex Inverter

文件：940.17 Kbytes Page：16 Pages

Inverter Circuits

文件：137.35 Kbytes Page：6 Pages

CMOS Hex Inverter

文件：1.30607 Mbytes Page：30 Pages

CMOS Hex Inverter

文件：940.17 Kbytes Page：16 Pages

CMOS Hex Inverter

文件：940.17 Kbytes Page：16 Pages

CMOS Hex Inverter

文件：940.17 Kbytes Page：16 Pages

CMOS Hex Inverter

文件：1.30607 Mbytes Page：30 Pages

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