丝印代码：CD4030BM；CMOS Quad Exclusive-OR Gate

Features: Medium-speed operation—tpy_. tp = 65 ns (typ.) at Vpp = 10 V, C= 50 pF = 100% tested for quiescent current at 20 V Standardized, symmetrical output characteristics 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 uA at 18 V over full package- temperature ran

丝印代码：CD4030BM；CMOS Quad Exclusive-OR Gate

Features: Medium-speed operation—tpy_. tp = 65 ns (typ.) at Vpp = 10 V, C= 50 pF = 100% tested for quiescent current at 20 V Standardized, symmetrical output characteristics 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 uA at 18 V over full package- temperature ran

丝印代码：CD4030BM；CMOS Quad Exclusive-OR Gate

Features: Medium-speed operation—tpy_. tp = 65 ns (typ.) at Vpp = 10 V, C= 50 pF = 100% tested for quiescent current at 20 V Standardized, symmetrical output characteristics 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 uA at 18 V over full package- temperature ran

丝印代码：CD4030BM；CMOS Quad Exclusive-OR Gate

Features: Medium-speed operation—tpy_. tp = 65 ns (typ.) at Vpp = 10 V, C= 50 pF = 100% tested for quiescent current at 20 V Standardized, symmetrical output characteristics 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 uA at 18 V over full package- temperature ran

丝印代码：CD4030BM；CMOS Quad Exclusive-OR Gate

Features: Medium-speed operation—tpy_. tp = 65 ns (typ.) at Vpp = 10 V, C= 50 pF = 100% tested for quiescent current at 20 V Standardized, symmetrical output characteristics 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 uA at 18 V over full package- temperature ran

丝印代码：CD4030BM；CMOS Quad Exclusive-OR Gate

Features: Medium-speed operation—tpy_. tp = 65 ns (typ.) at Vpp = 10 V, C= 50 pF = 100% tested for quiescent current at 20 V Standardized, symmetrical output characteristics 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 uA at 18 V over full package- temperature ran

丝印代码：CD4030BM；CMOS Quad Exclusive-OR Gate

Features: Medium-speed operation—tpy_. tp = 65 ns (typ.) at Vpp = 10 V, C= 50 pF = 100% tested for quiescent current at 20 V Standardized, symmetrical output characteristics 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 uA at 18 V over full package- temperature ran

丝印代码：CD4030BM；CMOS Quad Exclusive-OR Gate

Features: Medium-speed operation—tpy_. tp = 65 ns (typ.) at Vpp = 10 V, C= 50 pF = 100% tested for quiescent current at 20 V Standardized, symmetrical output characteristics 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 uA at 18 V over full package- temperature ran

丝印代码：CD4030BM；CMOS Quad Exclusive-OR Gate

Features: Medium-speed operation—tpy_. tp = 65 ns (typ.) at Vpp = 10 V, C= 50 pF = 100% tested for quiescent current at 20 V Standardized, symmetrical output characteristics 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 uA at 18 V over full package- temperature ran

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE XOR 4CH 2-INP 14SOIC 集成电路（IC） 门和反相器

CMOS QUAD EXCLUSIVE-OR GATE

文件：497.8 Kbytes Page：11 Pages

CMOS Quad Exclusive - OR Gate

文件：1.14175 Mbytes Page：16 Pages

CMOS Quad Exclusive-OR Gate

Description The CD4030BMS types consist of four independent Exclusive-OR gates. The CD4030BMS provides the system designer with a means for direct implementation of the Exclusive-OR function. Features • High Voltage Type (20V Rating) • Medium-Speed Operation     - tPHL, tPLH = 65ns (typ) at V

CMOS Quad Exclusive-OR Gate

Features • High Voltage Type (20V Rating) • Medium-Speed Operation - tPHL, tPLH = 65ns (typ) at VDD = 10V, CL = 50pF • 100 Tested for Quiescent Current at 20V • Standardized Symmetrical Output Characteristics • 5V, 10V and 15V Parametric Ratings • Maximum Input Current Of 1A at 18V Over Fu

CMOS Quad Exclusive-OR Gate

The CD4030BMS types consist of four independent Exclusive- OR gates. The CD4030BMS provides the system designer with a means for direct implementation of the Exclusive-OR function.\nThe CD4030BMS is supplied in these 14-lead outline packages: Braze Seal DIP H4H Frit Seal DIP H1B Ceramic Flatpack H3W • High Voltage Type (20V Rating) \n• Medium-Speed Operation \n• tPHL, tPLH = 65ns (typ) at VDD = 10V, CL = 50pF \n• 100% Tested for Quiescent Current at 20V \n• Standardized Symmetrical Output Characteristics \n• 5V, 10V and 15V Parametric Ratings \n• Maximum Input Current Of 1µA at 18V Over Ful;

CMOS Quad Exclusive - OR Gate

文件：1.14175 Mbytes Page：16 Pages

CMOS QUAD EXCLUSIVE-OR GATE

文件：497.8 Kbytes Page：11 Pages

CMOS QUAD EXCLUSIVE-OR GATE

文件：497.8 Kbytes Page：11 Pages

CMOS Quad Exclusive - OR Gate

文件：1.14175 Mbytes Page：16 Pages

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE XOR 4CH 2-INP 14SOIC 集成电路（IC） 门和反相器

CMOS QUAD EXCLUSIVE-OR GATE

文件：497.8 Kbytes Page：11 Pages

CMOS Quad Exclusive - OR Gate

文件：1.14175 Mbytes Page：16 Pages

CMOS Quad Exclusive - OR Gate

文件：1.14175 Mbytes Page：16 Pages

CMOS QUAD EXCLUSIVE-OR GATE

文件：497.8 Kbytes Page：11 Pages

CMOS QUAD EXCLUSIVE-OR GATE

文件：497.8 Kbytes Page：11 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res

KK Mini -2.50mm & 2.54mm Modular Interconnection System

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

Quad EXCLUSIVE-OR Gate

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