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CD4025B价格
参考价格：￥0.9678
型号：CD4025BE 品牌：TI 备注：这里有CD4025B多少钱，2025年最近7天走势，今日出价，今日竞价，CD4025B批发/采购报价，CD4025B行情走势销售排行榜，CD4025B报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CD4025B | CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 |   | |
CD4025B | CMOS NOR Gates 文件：206.27 Kbytes Page：5 Pages | TI 德州仪器 | | |
CD4025B | CMOS NOR Gates 文件：1.18416 Mbytes Page：18 Pages | TI 德州仪器 | | |
CD4025B | CD4000系列 逻辑芯片 | HGSEMI 华冠 | | |
CD4025B | 3 通道、3 输入、3V 至 18V 或非门 | TI 德州仪器 | | |
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gate Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standard Symmetrical Output Characteristics • 100 Tested for Maximum Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Curre | RENESAS 瑞萨 | | ||
CMOS NOR Gate Description CD4000BMS - Dual 3 Plus Inverter CD4001BMS - Quad 2 Input CD4002BMS - Dual 4 Input CD4025BMS - Triple 3 Input CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing f | Intersil | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
CMOS NOR Gates Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov | TI 德州仪器 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
CMOS NOR Gates 文件：523.679 Kbytes Page：12 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：1.18416 Mbytes Page：18 Pages | TI 德州仪器 | | ||
封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NOR 3CH 3-INP 14DIP 集成电路（IC） 门和反相器 | TI2 德州仪器 | | ||
CMOS NOR Gates 文件：1.18416 Mbytes Page：18 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC GATE NOR 3CH 3-INP 14DIP 集成电路（IC） 门和反相器 | TI2 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：523.679 Kbytes Page：12 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：1.18416 Mbytes Page：18 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：523.679 Kbytes Page：12 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：1.18416 Mbytes Page：18 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：523.679 Kbytes Page：12 Pages | TI 德州仪器 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：1.18416 Mbytes Page：18 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：523.679 Kbytes Page：12 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：1.18416 Mbytes Page：18 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：1.18416 Mbytes Page：18 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：1.18416 Mbytes Page：18 Pages | TI 德州仪器 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
CMOS NOR Gate | RENESAS 瑞萨 | | ||
CMOS NOR Gates 文件：523.679 Kbytes Page：12 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：1.18416 Mbytes Page：18 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NOR Gates 文件：952.17 Kbytes Page：19 Pages | TI 德州仪器 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMOS QUAD 2-LINE-TO-1-LINE DATA SELECTOR/MULTIPLEXER | TI 德州仪器 | TI | | |
Buffered Triple 3-Input NAND,NOR Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | | |
CMOS Quad 2 Line to 1 Line Data Selector/Multiplexer | Intersil | Intersil | | |
NOR GATE | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Triple 3-input NOR Gate | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | | |
Triple 3-input NOR gate | Philips 飞利浦 | Philips | | |
Triple 3-input NOR gate | Philips 飞利浦 | Philips | | |
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | | |
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | | |
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | | |
B−Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | | |
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | | |
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | | |
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | | |
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | | |
INPUT NOR GATE | RANDE | RANDE | |
CD4025B产品属性
- 类型
描述
- 型号
CD4025B
- 制造商
Texas Instruments
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
22+ |
DAP |
100000 |
代理渠道/只做原装/可含税 |
|||
TI(德州仪器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
TI/德州仪器 |
25+ |
CDIP14 |
65248 |
百分百原装现货 实单必成 |
|||
TI |
24+ |
DIP |
30000 |
原装正品公司现货,假一赔十! |
|||
TI |
24+ |
SOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
TI |
25+ |
SOIC14 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
TI/德州仪器 |
25+ |
DIP14 |
12360 |
TI/德州仪器原装特价CD4025BE即刻询购立享优惠#长期有货 |
|||
TI(德州仪器) |
2024+ |
- |
500000 |
诚信服务,绝对原装原盘 |
|||
TI |
17+ |
CDIP |
58 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TI/德州仪器 |
24+ |
DIP |
760 |
大批量供应优势库存热卖 |
CD4025B规格书下载地址
CD4025B参数引脚图相关
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- d126
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- CD4026BF
- CD4026BE
- CD4026BD
- CD4026B
- CD4026AF
- CD4026AE
- CD4026AD
- CD4025UBF
- CD4025UBE
- CD4025UBD
- CD4025MW
- CD4025MJ
- CD4025M
- CD4025CN
- CD4025CJ
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- CD4025BMW
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- CD4025BF
- CD4025BE
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- CD4025AF
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- CD4024BMW
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- CD4024BE
- CD4024BD
- CD4024BCN
- CD4024BCJ
- CD4024B
- CD4024AF
- CD4024AE
- CD4024AD
- CD4024
- CD4023UBF
- CD4023UBE
- CD4023UBD
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CD4025B数据表相关新闻
CD4024BM96
CD4024BM96
2022-11-22CD4028BM96
属性 参数值 商品目录 4000系列逻辑芯片 逻辑电路的归属系列 4000B 逻辑类型 编码器 电路/元件数 - 输入数/每元件位数 - 工作电压 3V ~ 18V
2021-7-8CD4024BM96
CD4024BM96 ，当天发货0755-82732291全新原装现货或门市自取.
2020-11-9CD4027BM96
CD4027BM96，当天发货0755-82732291全新原装现货或门市自取.
2020-11-8CD4028BM96
CD4028BM96，当天发货0755-82732291全新原装现货或门市自取.
2020-11-7CD4023BE原厂原装正品现货
焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-10-2
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