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CD40107价格
参考价格：￥1.0624
型号：CD40107BE 品牌：TEXAS 备注：这里有CD40107多少钱，2025年最近7天走势，今日出价，今日竞价，CD40107批发/采购报价，CD40107行情走势销售排行榜，CD40107报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CD40107 | CMOS Dual 2 Input NAND Buffer/Driver Description CD40107BMS is a dual 2 input NAND buffer/driver contain ing two independent 2 input NAND buffers with open drain single n-channel transistor outputs. This device features a wired OR capability and high output sink current capability (136mA typ. at VDD = 10V, VDS = 1V). Features | Intersil |   | |
CD40107 | CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | |
CD40107 | CMOS Dual 2 Input NAND Buffer/Driver | RENESAS 瑞萨 | | |
CD40107 | CMOS DUAL 2-INPUT NAND BUFFER/DRIVER | TI 德州仪器 | | |
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2 Input NAND Buffer/Driver Description CD40107BMS is a dual 2 input NAND buffer/driver contain ing two independent 2 input NAND buffers with open drain single n-channel transistor outputs. This device features a wired OR capability and high output sink current capability (136mA typ. at VDD = 10V, VDS = 1V). Features | Intersil | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC GATE NAND OD 2CH 2-INP 8DIP 集成电路（IC） 门和反相器 | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND OD 2CH 2-INP 8SOIC 集成电路（IC） 门和反相器 | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
具有开漏输出的军用 2 通道、2 输入、3V 至 18V 与非门 | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | | ||
CMOS DUAL 2-INPUT NAND BUFFER/DRIVER 文件：165.45 Kbytes Page：10 Pages | TI 德州仪器 | |
CD40107产品属性
- 类型
描述
- 型号
CD40107
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
CMOS Dual 2 Input NAND Buffer/Driver
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
|||
TI/德州仪器 |
25+ |
DIP-8 |
4987 |
强势库存!绝对原装公司现货! |
|||
TI(德州仪器) |
24+ |
N/A |
60000 |
全网最低/原装现货 |
|||
TI/德州仪器 |
2023+ |
SMD |
53200 |
正品,原装现货 |
|||
TI |
三年内 |
1983 |
只做原装正品 |
||||
TI/德州仪器 |
22+ |
DIP-8 |
500000 |
原装现货支持实单价优/含税 |
|||
TI(德州仪器) |
24+ |
SOP |
8048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TI/德州仪器 |
24+ |
DIP8 |
10650 |
原厂原装货/代理渠道 |
|||
TI |
2450+ |
DIP |
9485 |
只做原厂原装正品终端客户免费申请样品 |
|||
ON |
25+23+ |
DIP |
30378 |
绝对原装正品全新进口深圳现货 |
CD40107规格书下载地址
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