| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
包装:散装 描述:PIGTAIL-B BCAT6+ CMR BLK 20FT 电缆组件 模块化电缆 | HIRSCHMANN | |||
包装:散装 描述:PIGTAIL-B BCAT6+ CMR BLK 25FT 电缆组件 模块化电缆 | HIRSCHMANN | |||
Compact, 60W Wide 4:1 Input, DC/DC Converters | MPD | |||
Isolated, 60W Ultra-Wide 4:1Input DC/DC Converters 文件:320.59 Kbytes Page:2 Pages | MPD | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | |||
Silicon Industrial Rectifier 20 Amp Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add | NTE |
C6013产品属性
- 类型
描述
- Output V:
12 VDC
- Output I:
5
C6013规格书下载地址
C6013参数引脚图相关
- ccd图像传感器
- ccd传感器
- CCD
- cbb电容
- cbb60
- capsense
- can总线
- ca851
- ca3410
- ca158
- ca1558
- ca1458
- ca139
- ca121
- c960
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- c9012
- c901
- C80
- c62f
- C6065P
- C6063P(HEP)
- C6063P
- C6062P(HEP)
- C6062P
- C6061P
- C6060PIHEP)
- C6060P
- C6059P(HEP)
- C6059P
- C6057P(HEP)
- C6057P
- C6055L(HEP)
- C6052P(HEP)
- C6052P
- C6052M
- C6050G
- C6040A
- C603D
- C6039
- C-60385
- C-60384
- C6036NL
- C6036A
- C6035A
- C6035
- C6026A
- C6026
- C-601Y
- C-601SR
- C-601H
- C-601G
- C-601E
- C6017A
- C6017
- C6016
- C6015A
- C6014RU
- C6014
- C6013RU
- C6012RU
- C6011RU
- C6011A
- C6011
- C6010P
- C6010A
- C6010
- C6009P
- C6004RU
- C6003RU
- C6003
- C6002RU
- C6001RU
- C6001L
- C6001
- C6000RU
- C-5YC
- C-5XC
- C5-T3R1
- C-5R6-M
- C5NF20V
- C5-KT3L
- C5KP22
- C5-K3RA
- C5-K3R
- C596C(IC)
- C596(IC)
- C577H
- C575C2
- C555A
- C554C
- C4LS374AP
- C4558C
- C4059P
- C393C(IC)
- C393C
- C3806P
- C3801P
- C3800P
C6013数据表相关新闻
C8051F040-GQR 8位微控制器 -MCU
C8051F040-GQR 8位微控制器 -MCU
2023-5-22C5750X7R1V476M230KC
C5750X7R1V476M230KC
2022-8-19C5750X6S2W225K250KA
原装正品现货
2022-7-13C8051F020-GQR最大时钟频率:25 MHz 输入/输出端数量:64 I/O 数据 RAM 大小:4.25 kB
C8051F020-GQR
2021-9-17C5BQ和C8AQ系列石英晶体FC5BQCCMC12.0-T1
Fox Electronics的C5BQ和C8AQ系列SMD晶体符合RoHS要求,可用于多种晶体应用
2019-12-3C70710M0065122A
C707 10M006 512 2A,全新原装当天发货或门市自取0755-82732291.
2019-4-5
DdatasheetPDF页码索引
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