RF Power Field Effect Transistors

RF LDMOS Wideband Integrated Power Amplifiers

RF Power Field Effect Transistors

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General Multilayer Ceramic Chip Capacitors C Series

FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • High-accuracy automatic mounting is facilitated through the main

General Multilayer Ceramic Chip Capacitors C Series

FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • High-accuracy automatic mounting is facilitated through the main

RF Power Field Effect Transistor

865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Perfor

RF LDMOS Wideband Integrated Power Amplifiers