General Multilayer Ceramic Chip Capacitors C Series

FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • High-accuracy automatic mounting is facilitated through the main

RF Power Field Effect Transistor

865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Perfor

RF LDMOS Wideband Integrated Power Amplifiers

RF Power Field Effect Transistor

Commercial Grade ( General (Up to 50V) )

C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency

RF Power Field Effect Transistors

封装/外壳：2220（5750 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 10UF 50V X5R 2220 电容器 陶瓷电容器

封装/外壳：2220（5750 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 10UF 50V X5R 2220 电容器 陶瓷电容器

积层贴片陶瓷片式电容器

Multilayer Ceramic Chip Capacitors

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RF LDMOS Wideband Integrated Power Amplifiers

RF Power Field Effect Transistors

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General Multilayer Ceramic Chip Capacitors C Series

FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • High-accuracy automatic mounting is facilitated through the main