8-bit CMOS MICROCONTROLLER

Advance Information • Full upward compatibility with SAB 80C517A/83C517A-5 • Up to 24 MHz external operating frequency – 500 ns instruction cycle at 24 MHz operation • Superset of the 8051 architecture with 8 datapointers • On-chip emulation support logic (Enhanced Hooks Technology TM) •

8-Bit CMOS Microcontroller

Introduction The C517A is a high-end member of the Siemens C500 family of 8-bit microcontrollers. lt is functionally fully compatible with the SAB-80C517A/83C537A-5 microcontrollers. The C517A basically operates with internal and/or external program memory. The C517A-L is identical to the C517A-

8 BIT CMOS MICROCONTROLLER

• Full upward compatibility with SAB 80C517A/83C517A-5 • Up to 24 MHz external operating frequency – 500 ns instruction cycle at 24 MHz operation • Superset of the 8051 architecture with 8 datapointers • On-chip emulation support logic (Enhanced Hooks Technology™) • 32K byte on-chip

8-Bit CMOS Microcontroller

文件：1.47459 Mbytes Page：218 Pages

8-Bit CMOS Microcontroller

8-Bit CMOS Microcontroller

文件：1.47459 Mbytes Page：218 Pages

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator ■ AnyESR REGULATOR ■ VERY COMMON OUTPUT DECOUPLING CERAMIC CAPACITOR ■ LOW CONSUMPTION : 250µA FULL LOAD ■ VERY LOW NOISE : 30µV ■ VERY LOW DROPOUT VOLTAGE : 50mV ■ HIGH PSRR : 60dB ■ STANDBY AND POWER DOWN

Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven

Features: ● Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power ● Low Forward Voltage Drop ● Typical IR less than 0.1µA ● High Overload Surge Capacity

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.