4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

丝印代码：C4D15120；Silicon Carbide Schottky Diode Z-Rec Rectifier

文件：804.16 Kbytes Page：6 Pages

封装/外壳：TO-247-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ZRECTM 15A 1200V SIC SCHOTTKY DI 分立半导体产品 二极管 - 整流器 - 单

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4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Silicon Carbide Schottky Diode

文件：705.42 Kbytes Page：6 Pages