Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2-KVolt Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficienc

封装/外壳：TO-247-3 包装：管件 描述：DIODE SCHOTTKY 1.2KV 24.5A TO247 分立半导体产品 二极管 - 整流器 - 阵列

碳化硅肖特基二极管

SiC肖特基二极管

Schottky Rectifier

Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m