型号 功能描述 生产厂家 企业 LOGO 操作
C3M0075120K

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 75mΩ(TYP.)@VGS=18V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

ISC

无锡固电

C3M0075120K

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

WOLFSPEED

C3M0075120K

Silicon Carbide Power MOSFET C3M MOSFET Technology

文件:1.36001 Mbytes Page:11 Pages

Cree

科锐

C3M0075120K

碳化硅 MOSFET

ETC

知名厂家

C3M0075120K

1200 V Discrete Silicon Carbide MOSFETs

WOLFSPEED

Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical Appl

WOLFSPEED

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

WOLFSPEED

1200 V Discrete Silicon Carbide MOSFETs

WOLFSPEED

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Inc

WOLFSPEED

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Inc

WOLFSPEED

Silicon Carbide Power MOSFET C3M MOSFET Technology

文件:877.49 Kbytes Page:10 Pages

Cree

科锐

Silicon Carbide Power MOSFET C3M MOSFET Technology

文件:1.4317 Mbytes Page:10 Pages

Cree

科锐

更新时间:2025-10-23 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CREE
24+
TO-247-4
534
原装现货,有上库存就有货,假一赔十
CREE全系列可接受订货
23+
CREE全系列可接受订货
9808
原厂授权代理分销现货只做原装正迈科技样品支持现货
Wolfspeed
2024
6300
全新、原装
WOLFSPEED
24+
N/A
10000
只做原装,实单最低价支持
CREE
2450+
TO247
9850
只做原厂原装正品现货或订货假一赔十!
CREE(科锐)
24+
N/A
10166
原厂可订货,技术支持,直接渠道。可签保供合同
Wolfspeed
21+ 22+
16200
工厂库存 清货处理
CREE(科锐)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
CREE
24+
TO247
29
只做原厂渠道 可追溯货源
WOLFSPEED
21+
SOIC-16
1532
全新原装鄙视假货

C3M0075120K数据表相关新闻