位置：首页 > IC中文资料 > C3M0075120K
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
C3M0075120K | Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery | WOLFSPEED |   | |
C3M0075120K | SiC N-Channel MOSFET FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 75mΩ（TYP.）@VGS=18V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives | ISC 无锡固电 | | |
C3M0075120K | Silicon Carbide Power MOSFET C3M MOSFET Technology 文件：1.36001 Mbytes Page：11 Pages | Cree 科锐 | | |
C3M0075120K | 碳化硅 MOSFET | ETC 知名厂家 | ETC | |
C3M0075120K | 1200 V Discrete Silicon Carbide MOSFETs | WOLFSPEED | | |
Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical Appl | WOLFSPEED | | ||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery | WOLFSPEED | | ||
1200 V Discrete Silicon Carbide MOSFETs | WOLFSPEED | | ||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Inc | WOLFSPEED | | ||
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Inc | WOLFSPEED | | ||
Silicon Carbide Power MOSFET C3M MOSFET Technology 文件：877.49 Kbytes Page：10 Pages | Cree 科锐 | | ||
Silicon Carbide Power MOSFET C3M MOSFET Technology 文件：1.4317 Mbytes Page：10 Pages | Cree 科锐 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE(科锐) |
24+ |
N/A |
10166 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
WOLFSPEED |
24+ |
TO247-4 |
2250 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
Wolfspeed(CREE) |
23+ |
N/A |
587 |
代理渠道,价格优势 |
|||
CREE |
2450+ |
TO247 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
CREE(科锐) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
CREE |
24+ |
TO-247-4 |
534 |
原装现货,有上库存就有货,假一赔十 |
|||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Cree/Wolfspeed |
22+ |
TO2474 |
9000 |
原厂渠道,现货配单 |
|||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
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DdatasheetPDF页码索引
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