丝印代码：C3M0075120K；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

丝印代码：C3M0075120K；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.36001 Mbytes Page：11 Pages

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 75mΩ（TYP.）@VGS=18V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

1200 V Discrete Silicon Carbide MOSFETs

碳化硅 MOSFET

丝印代码：C3M0075120K1；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical Appl

丝印代码：C3M0075120K-A；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

分立式碳化硅肖特基二极管

丝印代码：C3M0075120D；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Inc

丝印代码：C3M0075120；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：877.49 Kbytes Page：10 Pages

丝印代码：C3M0075120J；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.4317 Mbytes Page：10 Pages

丝印代码：E3M0075120K；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery