Features

• 3rd generation SiC MOSFET technology

• Optimized package with separate driver source pin

• 8mm of creepage distance between drain and source

• High blocking voltage with low on-resistance

• High-speed switching with low capacitances

• Fast intrinsic diode with low reverse recovery (Qrr)

• Halogen free, RoHS compliant

Benefits

• Reduce switching losses and minimize gate ringing

• Higher system efficiency

• Reduce cooling requirements

• Increase power density

• Increase system switching frequency

Applications

• Renewable energy

• EV battery chargers

• High voltage DC/DC converters

• Switch Mode Power Supplies