Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

C3D08060A

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

碳化硅肖特基二极管

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

600 V Discrete Silicon Carbide Schottky Diodes

Low forward voltage (Vf) drop over temperatureZero reverse-recovery charge for fast switching operationsRobust MPS technologyHigh reverse-voltage blocking capability • Low forward voltage (Vf) drop over temperature\n• Zero reverse-recovery charge for fast switching operations\n• Robust MPS technology\n• High reverse-voltage blocking capability;

封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 600V 8A TO220-2 分立半导体产品 二极管 - 整流器 - 单

SiC肖特基二极管

Silicon Carbide Schottky Diode

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Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

丝印代码：C3D08060；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti