Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

丝印代码：C3D08060；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

600 V Discrete Silicon Carbide Schottky Diodes

Low forward voltage (Vf) drop over temperatureZero reverse-recovery charge for fast switching operationsRobust MPS technologyHigh reverse-voltage blocking capability • Low forward voltage (Vf) drop over temperature\n• Zero reverse-recovery charge for fast switching operations\n• Robust MPS technology\n• High reverse-voltage blocking capability;

SiC肖特基二极管

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 600V 8A TO263-2 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

文件：942.3 Kbytes Page：6 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 600V 20A TO263-2 分立半导体产品 二极管 - 整流器 - 单

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

C3D08060A

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m