封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 600V 6A TO263-2 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

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C3D06060A

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Silicon Carbide Schottky Diode

FEATURES · High-Frequency Operation · 600V Schottky Rectifier · Positive Temperature Coefficient on VF · No Reverse Recovery MECHANICAL CHARACTERISTICS · Replace Bipolar with Unipolar Rectifiers · Higher Efficiency · Parallel Devices Without Thermal Runaway

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Silicon Carbide Schottky Diode Z-Rec Rectifier 600-Volt Schottky Rectifier

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET