丝印代码：C3D06060；Silicon Carbide Schottky Diode Z-Rec® Rectifier (Full-Pak)

Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF • Fully Isolated Case Benefits • Replace Bipo

丝印代码：C3D06060；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

Silicon Carbide Schottky Diode

文件：783.03 Kbytes Page：6 Pages

Silicon Carbide Schottky Diode

FEATURES · High-Frequency Operation · 600V Schottky Rectifier · Positive Temperature Coefficient on VF · No Reverse Recovery MECHANICAL CHARACTERISTICS · Replace Bipolar with Unipolar Rectifiers · Higher Efficiency · Parallel Devices Without Thermal Runaway

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Silicon Carbide Schottky Diode Z-Rec Rectifier 600-Volt Schottky Rectifier

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

C3D06060A

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

碳化硅肖特基二极管

开关损耗降低，可实现高速开关。 低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

SiC Schottky Diode

DESCRIPTION · Extremely Fast Switching · Optimized for PFC Bosst Diode Application · Fully Isolated Case APPLICATIONS · Switch Mode Power Supply (SMPS) · AC/DC Converters · Solar Inverters

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

SiC肖特基二极管

碳化硅二极管

Silicon Carbide Schottky Diode

文件：857.13 Kbytes Page：6 Pages

封装/外壳：TO-220-2 整包 包装：管件 描述：DIODE SCHOTTKY 600V 6A TO220-F2 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

文件：783.03 Kbytes Page：6 Pages

Silicon Carbide Schottky Diode

文件：965.7 Kbytes Page：6 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 600V 6A TO263-2 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

文件：1.03292 Mbytes Page：6 Pages