Silicon Carbide Schottky Diode Z-Rec® Rectifier (Full-Pak)

Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF • Fully Isolated Case Benefits • Replace Bipo

封装/外壳：TO-220-2 整包 包装：管件 描述：DIODE SCHOTTKY 600V 6A TO220-F2 分立半导体产品 二极管 - 整流器 - 单

SiC肖特基二极管

600 V Discrete Silicon Carbide Schottky Diodes

Silicon Carbide Schottky Diode

文件：783.03 Kbytes Page：6 Pages

Silicon Carbide Schottky Diode

文件：783.03 Kbytes Page：6 Pages

Silicon Carbide Schottky Diode

文件：965.7 Kbytes Page：6 Pages

Silicon Carbide Schottky Diode

FEATURES · High-Frequency Operation · 600V Schottky Rectifier · Positive Temperature Coefficient on VF · No Reverse Recovery MECHANICAL CHARACTERISTICS · Replace Bipolar with Unipolar Rectifiers · Higher Efficiency · Parallel Devices Without Thermal Runaway

C3D06060A

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Silicon Carbide Schottky Diode Z-Rec Rectifier 600-Volt Schottky Rectifier

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET