3rd Generation 600 V, 4 A Silicon Carbide Schottky

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Be

Silicon Carbide Schottky Diode Z-Rec® Rectifier (Full-Pak)

Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF • Fully Isolated Case Benefits • Replace Bipo

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

SiC肖特基二极管

碳化硅肖特基二极管

Silicon Carbide Schottky Diode

文件：828.18 Kbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：DIODE SCHOTTKY 600V 4A TO252-2 分立半导体产品 二极管 - 整流器 - 单

600 V Discrete Silicon Carbide Schottky Diodes

Silicon Carbide Schottky Diode

文件：691.74 Kbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：DIODE SCHOTTKY 600V 15.5A TO252 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

文件：745.11 Kbytes Page：6 Pages