Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

丝印代码：C3D04060；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Be

600 V Discrete Silicon Carbide Schottky Diodes

Low forward voltage (Vf) drop over temperatureZero reverse-recovery charge for fast switching operationsRobust MPS technologyHigh reverse-voltage blocking capability • Low forward voltage (Vf) drop over temperature\n• Zero reverse-recovery charge for fast switching operations\n• Robust MPS technology\n• High reverse-voltage blocking capability;

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：DIODE SCHOTTKY 600V 4A TO252-2 分立半导体产品 二极管 - 整流器 - 单

SiC肖特基二极管

Silicon Carbide Schottky Diode

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：DIODE SCHOTTKY 600V 15.5A TO252 分立半导体产品 二极管 - 整流器 - 单

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

3rd Generation 600 V, 4 A Silicon Carbide Schottky

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET