Silicon Controlled Rectifier

文件：184.94 Kbytes Page：2 Pages

丝印代码：C393C；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

Very Low Power . . . 110 μW Typ at 5 V Fast Response Time . . . tPLH = 2.5 μs Typ With 5-mV Overdrive Single Supply Operation: TLC393C . . . 3 V to 16 V TLC393I . . . 3 V to 16 V TLC393Q . . . 4 V to 16 V TLC393M . . . 4 V to 16 V TLC193M . . . 4 V to 16 V On-Chip ESD Protection descri

丝印代码：C393C；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

Very Low Power . . . 110 μW Typ at 5 V Fast Response Time . . . tPLH = 2.5 μs Typ With 5-mV Overdrive Single Supply Operation: TLC393C . . . 3 V to 16 V TLC393I . . . 3 V to 16 V TLC393Q . . . 4 V to 16 V TLC393M . . . 4 V to 16 V TLC193M . . . 4 V to 16 V On-Chip ESD Protection descri

丝印代码：C393C；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

Very Low Power . . . 110 μW Typ at 5 V Fast Response Time . . . tPLH = 2.5 μs Typ With 5-mV Overdrive Single Supply Operation: TLC393C . . . 3 V to 16 V TLC393I . . . 3 V to 16 V TLC393Q . . . 4 V to 16 V TLC393M . . . 4 V to 16 V TLC193M . . . 4 V to 16 V On-Chip ESD Protection descri

丝印代码：C393C；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

Very Low Power . . . 110 μW Typ at 5 V Fast Response Time . . . tPLH = 2.5 μs Typ With 5-mV Overdrive Single Supply Operation: TLC393C . . . 3 V to 16 V TLC393I . . . 3 V to 16 V TLC393Q . . . 4 V to 16 V TLC393M . . . 4 V to 16 V TLC193M . . . 4 V to 16 V On-Chip ESD Protection descri

丝印代码：C393C；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

Very Low Power . . . 110 μW Typ at 5 V Fast Response Time . . . tPLH = 2.5 μs Typ With 5-mV Overdrive Single Supply Operation: TLC393C . . . 3 V to 16 V TLC393I . . . 3 V to 16 V TLC393Q . . . 4 V to 16 V TLC393M . . . 4 V to 16 V TLC193M . . . 4 V to 16 V On-Chip ESD Protection descri

丝印代码：C393Q1；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

1FEATURES 2• Qualified for Automotive Applications • AEC Q100 Qualified with the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Classification Level C4B • ESD Protection Exceeds

丝印代码：C393Q1；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

1FEATURES 2• Qualified for Automotive Applications • AEC Q100 Qualified with the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Classification Level C4B • ESD Protection Exceeds

丝印代码：C393Q1；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

1FEATURES 2• Qualified for Automotive Applications • AEC Q100 Qualified with the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Classification Level C4B • ESD Protection Exceeds

丝印代码：C393Q1；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

1FEATURES 2• Qualified for Automotive Applications • AEC Q100 Qualified with the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Classification Level C4B • ESD Protection Exceeds

丝印代码：C393C；DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR

文件：1.55622 Mbytes Page：33 Pages

丝印代码：C393C；DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR

文件：1.55622 Mbytes Page：33 Pages

丝印代码：C393I；DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR

文件：1.55622 Mbytes Page：33 Pages

丝印代码：C393I；DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR

文件：1.55622 Mbytes Page：33 Pages

丝印代码：C393I；DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR

文件：1.55622 Mbytes Page：33 Pages

丝印代码：C393I；DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR

文件：1.55622 Mbytes Page：33 Pages

丝印代码：C393Q；DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR

文件：1.55622 Mbytes Page：33 Pages

丝印代码：C393Q；DUAL MICROPOWER LinCMOS VOLTAGE COMPARATOR

文件：1.55622 Mbytes Page：33 Pages

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

LOW POWER DUAL COMPARATORS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

LOW POWER DUAL COMPARATORS

包装：散装 描述：SCR 400V 220A TO200AC 分立半导体产品 晶闸管 - SCR

THYRISTOR INV 220A 400V TO200AC

包装：散装 描述：SCR 600V 220A TO200AC 分立半导体产品 晶闸管 - SCR

High Voltage Transistors(NPN)

High Voltage Transistors NPN Silicon

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. Input offset voltage specifications

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. Input offset voltage specifications

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. Input offset voltage specifications

BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class A

Dual Comparators

Dual Comparators

BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output

BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output

BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output

BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output

Dual Comparator

High-Performance Dual Comparator

High-Performance Dual Comparator

DUAL DIFFERENTIAL COMPARATORS

Dual Differential Comparator

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

Low Power Low Offset Voltage Dual Comparators

Dual Differential Comparators

Low power dual voltage comparator

Low Power Dual Voltage Comparators

DUAL VOLTAGE COMPARATOR

Low power dual voltage comparators

Low Power Dual Voltage Comparators

Low Offset Voltage Dual Comparators

Low Offset Voltage Dual Comparators

DUAL DIFFERENTIAL COMPARATORS

DUAL DIFFERENTIAL COMPARATORS

DUAL COMPARATOR

DUAL COMPARATOR

SINGLE-SUPPLY QUAD COMPARATOR

SINGLE-SUPPLY DUAL COMPARATOR

Integrated Circuit Low Power, Low Offset, Dual Voltage Comparator

DUAL COMPARATOR

LOW POWER DUAL COMPARATORS

LOW POWER DUAL COMPARATORS