BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class A

The RF Line NPN Silicon Push-Pull RF Power Transistor

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB

The RF Line Controlled ?쏲??Broadband Power Transistor 100W, 30 to 500MHz, 28V

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 V, 500 MHz characteristics — Output power = 100 W Typical gain = 9.5 dB (Class AB); 8.5 dB (Class C) Efficiency = 55 (typ.) • Built–in input impedance

NPN Silicon Push-Pull RF Power TVansistor

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB

100 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON

Bipolar

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. ·Specified 28 V, 500 MHz Characteristics: Output Power = 100 W, Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C), Efficiency = 55% (Typ.)\n·Gold Metallization System for High Reliability\n·Push–Pull Configuration Reduces Even Numbered Harmonics\n·Built–In Input Impedance Matching Networks for ;

Trans GP BJT NPN 30V 16A 8-Pin Case 744A-01

The RF Line Controlled ?쏲??Broadband Power Transistor

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封装/外壳：744A-01 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS 2NPN EMITTR 30V 744A-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

The RF Line Controlled Broadband Power Transistor

文件：202.76 Kbytes Page：6 Pages

The RF Line Controlled ?쏲??Broadband Power Transistor

文件：659.24 Kbytes Page：7 Pages

High Voltage Transistors(NPN)

High Voltage Transistors NPN Silicon

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. Input offset voltage specifications

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. Input offset voltage specifications

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. Input offset voltage specifications