The RF Line Controlled ?쏲??Broadband Power Transistor 100W, 30 to 500MHz, 28V

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 V, 500 MHz characteristics — Output power = 100 W Typical gain = 9.5 dB (Class AB); 8.5 dB (Class C) Efficiency = 55 (typ.) • Built–in input impedance

BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class A

The RF Line NPN Silicon Push-Pull RF Power Transistor

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB

NPN Silicon Push-Pull RF Power TVansistor

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB

封装/外壳：744A-01 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS 2NPN EMITTR 30V 744A-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

100 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON

Trans GP BJT NPN 30V 16A 8-Pin Case 744A-01

Bipolar

The RF Line Controlled ?쏲??Broadband Power Transistor

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The RF Line Controlled Broadband Power Transistor

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The RF Line Controlled ?쏲??Broadband Power Transistor

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