GaN Doherty Hybrid Amplifier

Description Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45, and powers 7W over the frequency range

64/80/100-Pin, General Purpose, 16-Bit Flash Microcontrollers

This document contains device-specific information for the following devices: • PIC24FJ64GA006 • PIC24FJ64GA008 • PIC24FJ64GA010 • PIC24FJ96GA006 • PIC24FJ96GA008 • PIC24FJ96GA010 • PIC24FJ128GA006 • PIC24FJ128GA008 • PIC24FJ128GA010 This family introduces a new line

GaN Hybrid Power Amplifier

文件：1.28273 Mbytes Page：8 Pages

28/40/44/64-Pin, Enhanced Flash Microcontrollers with ECAN and nanoWatt XLP Technology

文件：5.15445 Mbytes Page：622 Pages

microBUCK SiC403 6 A, 28 V Integrated Buck Regulator with Programmable LDO

文件：648.72 Kbytes Page：26 Pages