GaN Doherty Hybrid Amplifier

Description Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45, and powers 7W over the frequency range

64/80/100-Pin, General Purpose, 16-Bit Flash Microcontrollers

This document contains device-specific information for the following devices: • PIC24FJ64GA006 • PIC24FJ64GA008 • PIC24FJ64GA010 • PIC24FJ96GA006 • PIC24FJ96GA008 • PIC24FJ96GA010 • PIC24FJ128GA006 • PIC24FJ128GA008 • PIC24FJ128GA010 This family introduces a new line

GaN Hybrid Power Amplifier

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28/40/44/64-Pin, Enhanced Flash Microcontrollers with ECAN and nanoWatt XLP Technology

文件：5.15445 Mbytes Page：622 Pages

GaN Doherty Hybrid Amplifier

封装/外壳：1206（3216 公制） 包装：袋 描述：CAP CER 10UF 16V X7R 1206 电容器 陶瓷电容器

MULTILAYER CERAMIC CHIP CAPACITORS

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Multilayer Ceramic Chip Capacitors

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Multilayer Ceramic Chip Capacitors

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Multilayer Ceramic Chip Capacitors

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积层贴片陶瓷片式电容器

封装/外壳：1206（3216 公制） 包装：袋 描述：CAP CER 10UF 16V X7R 1206 电容器 陶瓷电容器

贴片电容(MLCC)

microBUCK SiC403 6 A, 28 V Integrated Buck Regulator with Programmable LDO

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