型号 功能描述 生产厂家 企业 LOGO 操作

isc Silicon NPN Power Transistor

DESCRIPTION • High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V • High Reliability APPLICATIONS • Designed for RF power amplifiers on VHF band mobile radio applications.

ISC

无锡固电

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

Mitsubishi

三菱电机

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

PerkinElmer

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

PerkinElmer

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

PerkinElmer

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

PerkinElmer

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件:115.71 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Temperature Sensors Line Guide

文件:736.09 Kbytes Page:11 Pages

Honeywell

霍尼韦尔

MINIATURE FUSES - 5x20mm

文件:59.44 Kbytes Page:2 Pages

Littelfuse

力特

GaAs MMIC SOT26 SPDT SWTCH, DC-3GHz

文件:417.52 Kbytes Page:4 Pages

Hittite

GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz

文件:225.3 Kbytes Page:6 Pages

Hittite

C197产品属性

  • 类型

    描述

  • 型号

    C197

  • 制造商

    Datak Corporation

  • 功能描述

    Cable Assembly RS-232 15.24m 18AWG 25 POS D-Sub to 25 POS D-Sub M-M

更新时间:2025-10-20 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MITSUBISHI/三菱
25+
1220
880000
明嘉莱只做原装正品现货
MIT
25+
TO-220
5600
百分百原装正品 真实公司现货库存 本公司只做原装 可
MIT
23+
TO-202
50
专做原装正品,假一罚百!
COEV
25+
SMD10
4500
全新原装、诚信经营、公司现货销售!
MITSUBIS
23+
高频管
650
专营高频管模块,全新原装!
3凌
24+
TO-220-3
8866
MIT
22+
TO-220
12245
现货,原厂原装假一罚十!
MIT
25+
TO-220
18000
原厂直接发货进口原装
三凌
24+
TO-220
66500
郑重承诺只做原装进口现货
NEC
25+
3378
绝对原装公司现货供应!价格优势

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  • C2012X5R1A225M-60毫安稳压电荷泵电压逆变器

    TPS6040x是一个系列器件产生一个不受管制的负输出电压的输入电压范围从1.6 V至5.5 V的设备通常提供了5 V或3.3 V由于preregulated供应铁路宽输入电压范围,两个或三个镍镉,镍氢电池或碱性电池,以及一个锂离子电池动力的。只有三个外部1μF电容需要构建一个完整的电荷泵DC / DC逆变器。组装在5引脚SOT23封装,完整的转换器,可以建在一个50平方毫米的电路板面积。额外的电路板面积元件数量的减少是通过取代肖特基二极管,通常需要启动成积体电路的负荷。TPS6040x能够以一个典型的转换效率,更大的一个最大输出电流60毫安在很宽的输出电流范围内超过90%。 3与20千赫,5

    2012-12-28