Eva series

文件：1.15012 Mbytes Page：19 Pages

Eva Lens

文件：1.15013 Mbytes Page：19 Pages

包装：托盘 描述：LENS CLEAR ELLIPTICAL/OVAL 光电器件 光学 - 镜头

~100째 x 20째 oval beam. Assembly with location pins

文件：2.51895 Mbytes Page：7 Pages

Flare series

文件：1.75299 Mbytes Page：27 Pages

包装：托盘 描述：LENS CLEAR ELLIPTICAL/OVAL ADH 光电器件 光学 - 镜头

光电附件

X射线CMOS相机

34 x 33 mm lens with ~100째 x 15째 oval beam

文件：5.44361 Mbytes Page：11 Pages

Flare series

文件：2.53536 Mbytes Page：38 Pages

光电附件

Micro-spectrometer

文件：788.75 Kbytes Page：12 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

Silicon epitaxial planar type

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