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BYV10价格

参考价格：￥1.5281

型号：BYV10-600PQ 品牌：NXP Semiconductors 备注：这里有BYV10多少钱，2025年最近7天走势，今日出价，今日竞价，BYV10批发/采购报价，BYV10行情走势销售排行榜，BYV10报价。

型号	功能描述	生产厂家企业	LOGO
BYV10	Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •	Philips 飞利浦	Philips
BYV1020	Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •	Philips 飞利浦	Philips
BYV10-20	Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •	Philips 飞利浦	Philips
BYV10-20	Schottky Barrier Diodes Schottky Barrier Diodes	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BYV1030	Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •	Philips 飞利浦	Philips
BYV10-30	Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •	Philips 飞利浦	Philips
BYV10-30	Schottky Barrier Diodes Schottky Barrier Diodes	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BYV1040	Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •	Philips 飞利浦	Philips
BYV1040	SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BYV10-40	SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BYV10-40	Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •	Philips 飞利浦	Philips
BYV10-40	Schottky Barrier Diodes Schottky Barrier Diodes	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BYV1060	SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BYV10-60	SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BYV10-600P	Ultrafast Power Diodes FEATURES · Low forward volt drop · Low Leakage Current · Fast switching APPLICATIONS · High frequency switched-mode power supplies · Discontinuous Current Mode (DCM) · Power Factor Correction (PFC)	ISC 无锡固电	ISC
BYV10ED-600P	Ultrafast Power Diodes FEATURES · Low forward volt drop · Low Leakage Current · Fast switching APPLICATIONS · Switched-mode power supplies · Dual Mode (DCM and CCM) PFC · Power Factor Correction (PFC) for Interleaved Topology	ISC 无锡固电	ISC
BYV10EX-600P	Ultrafast Power Diodes FEATURES · Low forward volt drop · Low Leakage Current · Fast switching APPLICATIONS · Switched-mode power supplies · Dual Mode (DCM and CCM) PFC · Power Factor Correction (PFC) for Interleaved Topology	ISC 无锡固电	ISC
BYV10MX-600P	Ultrafast Power Diodes FEATURES · Low forward volt drop · Low Leakage Current · Fast switching APPLICATIONS · Switched-mode power supplies · Dual Mode (DCM and CCM) PFC · Power Factor Correction (PFC) for Interleaved Topology	ISC 无锡固电	ISC
BYV10X-600P	Ultrafast Power Diodes FEATURES · Low forward volt drop · Low Leakage Current · Fast switching APPLICATIONS · Switched-mode power supplies · Dual Mode (DCM and CCM) PFC · Power Factor Correction (PFC) for Interleaved Topology	ISC 无锡固电	ISC
BYV10-30	Diode Schottky 30V 1A 2-Pin GALF	ETC 知名厂家	ETC
BYV10-40	SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BYV10-60	SMALL SIGNAL SCHOTTKY DIODE	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BYV10-600P	Ultrafast power diode	ETC 知名厂家	ETC
BYV10-600P	Ultrafast power diode 文件：619.45 Kbytes Page：10 Pages	WEEN 瑞能半导体	WEEN
BYV10-600P_15	Ultrafast power diode 文件：181.47 Kbytes Page：9 Pages	Philips 飞利浦	Philips
BYV10D-600P	Ultrafast power diode 文件：527.58 Kbytes Page：10 Pages	WEEN 瑞能半导体	WEEN
BYV10D-600P	功率二极管（快速恢复）	WEEN 瑞能半导体	WEEN
BYV10D-600PJ	Ultrafast power diode 文件：527.58 Kbytes Page：10 Pages	WEEN 瑞能半导体	WEEN
BYV10ED-600P	Ultrafast power diode 文件：714.12 Kbytes Page：10 Pages	WEEN 瑞能半导体	WEEN
BYV10ED-600P_15	Ultrafast power diode 文件：194.51 Kbytes Page：11 Pages	Philips 飞利浦	Philips
BYV10ED-600PJ	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：DIODE GEN PURP 600V 10A DPAK 分立半导体产品二极管 - 整流器 - 单	WEEN 瑞能半导体	WEEN
BYV10EX-600P	Ultrafast power diode 文件：338.75 Kbytes Page：10 Pages	WEEN 瑞能半导体	WEEN
BYV10EX-600P_15	Ultrafast power diode 文件：171.35 Kbytes Page：11 Pages	Philips 飞利浦	Philips
BYV10EX-600PQ	封装/外壳：TO-220-2 全封装，隔离接片包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：DIODE GEN PURP 600V 10A TO220F 分立半导体产品二极管 - 整流器 - 单	WEEN 瑞能半导体	WEEN
BYV10X	Ultrafast power diode 文件：650.3 Kbytes Page：10 Pages	WEEN 瑞能半导体	WEEN
BYV10X-600P	Ultrafast power diode 文件：184.93 Kbytes Page：9 Pages	Philips 飞利浦	Philips
BYV10X-600P	Ultrafast power diode 文件：650.3 Kbytes Page：10 Pages	WEEN 瑞能半导体	WEEN
BYV10X-600P_15	Ultrafast power diode 文件：184.93 Kbytes Page：9 Pages	Philips 飞利浦	Philips

BYV10产品属性

类型
描述
型号
BYV10
制造商
PHILIPS
制造商全称
NXP Semiconductors
功能描述
Schottky barrier diodes

BYV10供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	BYV106	ST/意法	24+	NA/	6250	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	BYV10X-600P	恩XP	24+	标准封装	8048	全新原装正品/价格优惠/质量保障	询价
上海意淼电子科技有限公司	BYV10-40	MAXIM	23+	NA	3580	全新原装假一赔十	询价
深圳市纳艾斯科技有限公司	BYV10X-600P	恩XP	24+	TO-220F	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市华康联电子科技有限公司	BYV10X-600P	Nexperia	25+	N/A	20000		询价
深圳市赛美科科技有限公司	BYV10X-600P	恩XP		NA	12530	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市凌旭科技有限公司	BYV10X-600P	恩XP	21+	TO-220F-2	1709		询价
深圳市诺美思科技有限公司	BYV10-40	SST		原厂封装	9800	原装进口公司现货假一赔百	询价
中天科工半导体（深圳）有限公司	BYV10X-600P	恩XP	25+	TO220F	32360	NXP/恩智浦全新特价BYV10X-600P即刻询购立享优惠#长期有货	询价
深圳市美思瑞电子科技有限公司	BYV10X-600P	恩XP	22+	TO-220F-2	12245	现货,原厂原装假一罚十!	询价

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BYV10价格

BYV10产品属性

BYV10供应商更多...

BYV10芯片相关品牌

BYV10规格书下载地址

BYV10参数引脚图相关

BYV10数据表相关新闻

BYT337

BYT333

BYS441

BYV28-200-TAP

BYV26C 整流器二极管 代理渠道 ，进口原装

BYV26E-TAP

DdatasheetPDF页码索引

BYV26C 整流器二极管代理渠道，进口原装