Standard Recovery Rectifiers

SINTERED GLASS JUNCTION PLASTIC RECTIFIER

FEATURE High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350°C /10sec/0.375”lead length at 5 lbs tension Operate at Ta =55°C with

Miniature Clamper/Damper Glass Passivated Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of

Miniature Clamper / Damper Glass Passivated Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of

2.0A Axial Leaded Sintered Class Junction Plastic Rectifier

Features • High temperature metallurgically bonded construction • Sintered glass cavity free junction • Capability of meeting environmental standard of MIL-S-19500 • High temperature soldering guaranteed 350°C /10sec/0.375”lead length at 5 lbs tension • Operate at Ta =55°C with no thermal run

Miniature Clamper / Damper Glass Passivated Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of

1.5A Clamper/Damping diode

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Standard Recovery

Super Fast Recovery Rectifier  

Miniature Clamper/Damper Glass Passivated Fast Rectifier

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封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 1.65KV 1.5A DO204 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 1.65KV 1.5A DO204 分立半导体产品 二极管 - 整流器 - 单

Power MOSFET(Vdss=500V, Rds(on)=0.60ohm, Id=11A)

DESCRIPTION Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast S

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • LED Inverter Circuits • DC/DC Conversion Circuits • Motor drives

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD448 is Pb-free (meets ROHS & Sony 259 specifications). AO

Linear motion 0.2 watt composition slide control

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Surface Mount Fuses

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