Miniature Clamper/Damper Glass Passivated Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of

SINTERED GLASS JUNCTION PLASTIC RECTIFIER

FEATURE High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350°C /10sec/0.375”lead length at 5 lbs tension Operate at Ta =55°C with

2.0A Axial Leaded Sintered Class Junction Plastic Rectifier

Features • High temperature metallurgically bonded construction • Sintered glass cavity free junction • Capability of meeting environmental standard of MIL-S-19500 • High temperature soldering guaranteed 350°C /10sec/0.375”lead length at 5 lbs tension • Operate at Ta =55°C with no thermal run

Miniature Clamper / Damper Glass Passivated Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of

Miniature Clamper / Damper Glass Passivated Rectifier

分立 ·Superectifier structure for high reliability application\n·Cavity-free glass-passivated junction\n·Low forward voltage drop;

Standard Recovery

Super Fast Recovery Rectifier  

1.5A Clamper/Damping diode

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Miniature Clamper / Damper Glass Passivated Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of

Miniature Clamper/Damper Glass Passivated Fast Rectifier

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封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 1.65KV 1.5A DO204 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 1.65KV 1.5A DO204 分立半导体产品 二极管 - 整流器 - 单

Damper diode

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent

Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage rectification • Efficiency diode in horizontal deflection circuits

N-CHANNEL ENHANCEMENT MODE

The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: Output Power = 140 Watts. Gain = 1

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Effic

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40 ■ COMMON EMITTER ■ GOLD METALLIZATION