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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BVSS123LT1G | PowerMOSFET170mAmps,100Volts PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
TMOSFETTransistor(N-Channel) TMOSFETTransistor N–Channel | MotorolaMotorola, Inc 摩托罗拉 |  | | |
PowerMOSFET170mAmps,100Volts PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET170mAmps,100Volts PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET170mAmps,100Volts PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET170mAmps,100Volts PowerMOSFET170mAmps,100Volts N−ChannelSOT−23 Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
BVSS123LT1G产品属性
- 类型
描述
- 型号
BVSS123LT1G
- 功能描述
MOSFET NFET 100V 170MA 6OH
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原装 |
24+ |
标准 |
51967 |
热卖原装进口 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
ON/安森美 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON/安森美 |
23+ |
SOT-23 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ON/安森美 |
23+ |
SOT-23 |
20000 |
原装正品 欢迎咨询 |
|||
ON |
24+ |
SOT-23 (TO-236) |
25000 |
ON全系列可订货 |
|||
ON |
22+ |
N/A |
5000 |
挂了就有,工厂库存,YX价优 |
|||
ON/安森美 |
1407+ |
SOT-23 |
29403 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
|||
onsemi(安森美) |
21+ |
SOT-23 |
10000 |
只做原装 假一赔万 |
|||
ON/安森美 |
22+ |
SOT-23-3 |
25000 |
只有原装绝对原装,支持BOM配单! |
BVSS123LT1G芯片相关品牌
BVSS123LT1G规格书下载地址
BVSS123LT1G参数引脚图相关
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DdatasheetPDF页码索引
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