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BUZ73价格
参考价格：￥6.5480
型号：BUZ73AH 品牌：Infineon 备注：这里有BUZ73多少钱，2025年最近7天走势，今日出价，今日竞价，BUZ73批发/采购报价，BUZ73行情走势销售排行榜，BUZ73报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BUZ73 | SIPMOS Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 |   | |
BUZ73 | SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | |
BUZ73 | Fast Switching Speed DESCRIPTION • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • Fast Switching Speed • Low Drive Requirement APPLICATIONS • switching regulators, switching converters • motor drivers,relay drivers and | ISC 无锡固电 | | |
BUZ73 | SIPMOS® Power Transistor | Infineon 英飞凌 | | |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS®Power Transistor • N channel • Enhancement mode • Avalanche-rated | SIEMENS 西门子 | | ||
5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. | Intersil | | ||
SIPMOS Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated | Infineon 英飞凌 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and | COMSET | | ||
Fast Switching Speed DESCRIPTION • Drain Current –ID= 5.8A@ TC=37℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) • Fast Switching Speed • Low Drive Requirement APPLICATIONS • switching regulators, switching converters • motor drivers,relay drivers a | ISC 无锡固电 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level | SIEMENS 西门子 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, | ISC 无锡固电 | | ||
SIPMOS Power Transistor SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
COLOUR TELEVISION 文件：6.0518 Mbytes Page：70 Pages | TOSHIBA 东芝 | | ||
SIPMOS® Power Transistor | Infineon 英飞凌 | | ||
SIPMOS® Power Transistor | Infineon 英飞凌 | |
BUZ73产品属性
- 类型
描述
- 型号
BUZ73
- 功能描述
MOSFET N-CH 200V 7A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
21750 |
原装现货,当天可交货,原型号开票 |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
10048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
Infineo |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
24+ |
TO 220 |
160334 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
24+ |
原厂原封 |
6000 |
原装进口香港现货价优 |
|||
Infineon |
24+ |
TO-220AB |
27500 |
原装正品,价格最低! |
|||
Infineon/英飞凌 |
24+ |
TO-220 |
30000 |
全新原装现货特价销售,欢迎来电查询 |
|||
INFINEON/英飞凌 |
TO-220 |
7621 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
23+ |
2282 |
||||||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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