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BUZ73价格

参考价格:¥6.5480

型号:BUZ73AH 品牌:Infineon 备注:这里有BUZ73多少钱,2026年最近7天走势,今日出价,今日竞价,BUZ73批发/采购报价,BUZ73行情走势销售排行榜,BUZ73报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BUZ73

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

INFINEON

英飞凌

BUZ73

Fast Switching Speed

DESCRIPTION • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • Fast Switching Speed • Low Drive Requirement APPLICATIONS • switching regulators, switching converters • motor drivers,relay drivers and

ISC

无锡固电

BUZ73

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

BUZ73

SIPMOS® Power Transistor

SIPMOS® Power Transistor• N channel\n• Enhancement mode\n• Avalanche-rated

INFINEON

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS®Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

INTERSIL

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and

COMSET

Fast Switching Speed

DESCRIPTION • Drain Current –ID= 5.8A@ TC=37℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) • Fast Switching Speed • Low Drive Requirement APPLICATIONS • switching regulators, switching converters • motor drivers,relay drivers a

ISC

无锡固电

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

INFINEON

英飞凌

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

INFINEON

英飞凌

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

INFINEON

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

SIEMENS

西门子

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

INFINEON

英飞凌

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

SIEMENS

西门子

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

INFINEON

英飞凌

COLOUR TELEVISION

文件:6.0518 Mbytes Page:70 Pages

TOSHIBA

东芝

N CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Transistor

COMSET

BUZ73产品属性

  • 类型

    描述

  • 型号

    BUZ73

  • 功能描述

    MOSFET N-CH 200V 7A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-8-2 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
标准封装
10048
原厂渠道供应,大量现货,原型号开票。
Infineo
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
infineon
25+23+
TO-220
26954
绝对原装正品全新进口深圳现货
Infineon(英飞凌)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
INFINEON/英飞凌
22+
TO-220
8000
原装正品支持实单
INFINEON
25+
TO220
4500
全新原装、诚信经营、公司现货销售
BUZ73
25+
2000
2000
INFINEON
25+
TO-220铁头
10065
原装正品,有挂有货,假一赔十
INFINEON
24+
TO-220
5000
全新原装正品,现货销售
Infineon
17+
TO-220
6200

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