SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS®Power Transistor • N channel • Enhancement mode • Avalanche-rated

5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and

Fast Switching Speed

DESCRIPTION • Drain Current –ID= 5.8A@ TC=37℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) • Fast Switching Speed • Low Drive Requirement APPLICATIONS • switching regulators, switching converters • motor drivers,relay drivers a

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5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET

N CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORS

Transistor

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21