isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS® Power Transistor

SIPMOS® Power Transistor• N channel\n• Enhancement mode\n• Avalanche-rated\n• Logic Level\n• Pb-free lead plating; RoHS compliant\n• Halogen-free according to IEC61249-2-21

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21