isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) • High Speed Switching APPLICATIONS • Designed for high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) • High Speed Switching APPLICATIONS • Designed for high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

HIGH PERFORMANCE VOLTAGE COMPARATORS

The ability to operate from a single power supply of 5.0 V to 30 V or ±15 V split supplies, as commonly used with operational amplifiers, makes the LM211/LM311 a truly versatile comparator. Moreover, the inputs of the device can be isolated from system ground while the output can drive loads refer

Silicon Complementary Transistors General Purpose Output & Driver

Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and conv

Voltage Comparator

文件：1.08989 Mbytes Page：23 Pages

Voltage Comparator

文件：1.08989 Mbytes Page：23 Pages

C-MOS QUAD SPST ANALOG SWITCH

文件：156.78 Kbytes Page：4 Pages