isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) • High Speed Switching APPLICATIONS • Designed for high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) • High Speed Switching APPLICATIONS • Designed for high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

Shuguang Vacuum Tube 211

DESCRIPTION Directed heat cathode, 211 triode can be used in class A, B, C amplifying stage. 211 vacuum tube is compatible with GL-211, UV-211 and can be replaced each other.

Direct replacement for T3 쩌 Midget Edison Screw E10

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Modular Radio Telemetry System

文件：396.37 Kbytes Page：11 Pages

M8 Female 4 Pin Field Attachable

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Premier Supplier of Electronic Hardware

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