Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) • High Speed Switching APPLICATIONS • Designed for high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

Shuguang Vacuum Tube 211

DESCRIPTION Directed heat cathode, 211 triode can be used in class A, B, C amplifying stage. 211 vacuum tube is compatible with GL-211, UV-211 and can be replaced each other.

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Direct replacement for T3 쩌 Midget Edison Screw E10

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